4
RF Device Data
Freescale Semiconductor, Inc.
AFT09MS031NR1 AFT09MS031GNR1
TYPICAL CHARACTERISTICS
0105
15
20
1
100
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 2. Capacitance versus Drain--Source Voltage
C, CAPACITANCE (pF)
10
0
5
4
2
VDS, DRAIN--SOURCE VOLTAGE (VOLTS)
Figure 3. Drain Current versus Drain--Source Voltage
6
2
VGS
=4.0Vdc
Note:
Measured with both sides of the transistor tied together.
4
3
1
8121610
14 18 20
I
DS
, DRAIN CURRENT (AMPS)
TA
=25°C
2.5 Vdc
0
Crss
Ciss
Coss
300
6
7
8
9
3.0 Vdc
3.25 Vdc
3.5 Vdc
250
109
90
TJ, JUNCTION TEMPERATURE (°C)
Figure 4. MTTF versus Junction Temperature -- CW
Note:
MTTF value represents the total cumulative operating time
under indicated test conditions.
MTTF calculator available at http:/www.freescale.com/rf. Select
Software & Tools/Development Tools/Calculators to access MTTF
calculators by product.
107
106
104
110 130 150 170 190
MTTF (HOURS)
210 230
108
105
VDD
= 13.6 Vdc
ID
=2.6Amps
3.2 Amps
3.9 Amps
Measured with
±30 mV(rms)ac @ 1 MHz
VGS
=0Vdc
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